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PD - 93957A
IRFZ44V
HEXFET(R) Power MOSFET
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description
l
D
VDSS = 60V RDS(on) = 16.5mW
G S
ID = 55A
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
55 39 220 115 0.77 20 115 55 11 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RqJC RqCS RqJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.3 --- 62
Units
C/W
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1
3/25/01
IRFZ44V
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
DV(BR)DSS/DTJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 60 --- --- 2.0 24 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.062 --- --- --- --- --- --- --- --- --- --- 13 97 40 57 4.5 7.5 1812 393 103
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 16.5 mW VGS = 10V, ID = 31A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 31A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 51A 18 nC VDS = 48V 25 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 51A ns --- RG = 9.1W --- RD = 0.6W , See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 55 --- --- showing the A G integral reverse --- --- 220 S p-n junction diode. --- --- 2.5 V TJ = 25C, IS = 51A, VGS = 0V --- 70 105 ns TJ = 25C, IF = 51A --- 146 219 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I 51A, di/dt 227A/s, VDD V(BR)DSS, SD
TJ 175C
Starting TJ = 25C, L = 89H
RG = 25W , IAS = 51A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRFZ44V
1000
I D , Drain-to-Source Current (A)
100
10
4.5V
1
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10
4.5V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 175C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
1000
3.0
ID = 55A
I D , Drain-to-Source Current (A)
2.5
TJ = 25 C TJ = 175 C
100
2.0
1.5
10
1.0
0.5
1 4 5 6 7 8
V DS = 25V 20s PULSE WIDTH 9 10 11 12
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFZ44V
4000
20
3000
Crss = Cgd Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED
ID = 51A
16
V DS= 48V V DS= 30V V DS= 12V
C, Capacitance(pF)
12
2000
Ciss
8
1000
Coss Crss
0 1 10 100
4
0 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
1000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD , Reverse Drain Current (A)
TJ = 175 C
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
100
100
10us
10
TJ = 25 C
100us
10 1ms
1
0.1 0.2
V GS = 0 V
0.7 1.2 1.7 2.2
1 1
TC = 25 C TJ = 175 C Single Pulse
10
10ms
100
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRFZ44V
RD
60
VDS VGS D.U.T.
+ VDD
50
RG
ID , Drain Current (A)
-
40
10V
Pulse Width 1 s Duty Factor 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ44V
EAS , Single Pulse Avalanche Energy (mJ)
250
15V
200
ID 21A 36A BOTTOM 51A TOP
VDS
L
D R IV E R
RG
20V
D .U .T
IA S tp
150
+ - VD D
A
0 .0 1
100
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
50
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFZ44V
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFZ44V
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255) 6.10 (.240) -B4.69 (.185 ) 4.20 (.165 ) 1.32 (.052) 1.22 (.048)
4 15.24 (.60 0) 14.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
LE A D A S S IG N M E N T S 1 - G ATE 2 - D R A IN 3 - SOURCE 4 - D R A IN
14.09 (.55 5) 13.47 (.53 0)
4.06 (.160) 3.55 (.140)
3X 3X 1 .40 (.0 55) 1 .15 (.0 45)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NO TES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H
2.92 (.115) 2.64 (.104)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y LOT CO DE 9B1M
A
IN TE R N A T IO N A L R E C T IF IE R LO GO ASSEMBLY LOT CODE
PART NUMBER IR F 1 0 1 0 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 8 www.irf.com

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